Room-Temperature Tunnel Magnetoresistance
1995Moodera, Kinder, Wong & Meservey, "Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions" (Physical Review Letters 74, 3273-3276, 17 April 1995; DOI 10.1103/PhysRevLett.74.3273). Reported a large resistance change at room temperature across an insulating barrier between two ferromagnetic films, depending on the relative alignment of their magnetizations. The magnetic tunnel junction (MTJ) is the storage cell of MRAM and a read-sensor element.
Originators
- Jagadeesh S. Moodera
- Lisa R. Kinder
- Terrilyn M. Wong
- Robert Meservey
Landmark Paper
Checked 2026-11-02 — interim signal only, see docs/BASIC_ROADMAP.md Phase 10
Connections
- is precursor to Giant Tunnel Magnetoresistance with MgO Barriersbasis: reasoned
Parkin 2004 improves the same device class (the magnetic tunnel junction) by changing the barrier material; the 1995 room-temperature result is what made that device worth optimising. Reasoned dependency, not a verified citation.
Cross-Domain Connections
No verified cross-domain connections indexed for Room-Temperature Tunnel Magnetoresistance yet. Verified links are admitted under FSTP epistemic audit standards.